 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MDC3105LT1/D Integrated Relay/ Inductive Load Driver * Provides a Robust Driver Interface between D.C. Relay Coil and Sensitive Logic Circuits * Optimized to Switch Relays from a 3 V to 5 V Rail * Capable of Driving Relay Coils Rated up to 2.5 W at 5 V * Features Low Input Drive Current & Good Back-to-Front Transient Isolation * Internal Zener Eliminates Need for Free-Wheeling Diode * Internal Zener Clamp Routes Induced Current to Ground for Quieter System Operation * Guaranteed Off State with No Input Connection * Supports Large Systems with Minimal Off-State Leakage * ESD Resistant in Accordance with the 2000 V Human Body Model * Low Sat Voltage Reduces System Current Drain by Allowing Use of Higher Resistance Relay Coils Applications Include: * Telecom: Line Cards, Modems, Answering Machines, FAX Machines, Computer & Office: Feature Phone Electronic Hook Switch * Computer & Office: Photocopiers, Printers, Desktop Computers * Consumer: TVs & VCRs, Stereo Receivers, CD Players, Computer & Office: Cassette Recorders, TV Set Top Boxes * Industrial: Small Appliances, White Goods, Security Systems, Computer & Office: Automated Test Equipment, Garage Door Openers * Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches, Computer & Office: Lamp Drivers This device is intended to replace an array of three to six discrete components with an integrated SMT part. It is available in a SOT-23 package. It can be used to switch 3 to 6 Vdc inductive loads such as relays, solenoids, incandescent lamps, and small DC motors without the need of a free-wheeling diode. MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Power Supply Voltage Input Voltage Reverse Input Voltage Repetitive Pulse Zener Energy Limit (Duty Cycle 0.01%) Output Sink Current Continuous Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Smallblock is a trademark of Motorola, Inc. Symbol VCC Vin(fwd) Vin(rev) Ezpk IO TJ TA Tstg MDC3105LT1 RELAY/INDUCTIVE LOAD DRIVER SILICON SMALLBLOCKTM INTEGRATED CIRCUIT 3 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) INTERNAL CIRCUIT DIAGRAM Vout Vin 1.0 k 6.6 V (1) 33 k GND (2) (3) Value 6.0 6.0 - 0.5 50 500 150 - 40 to +85 - 65 to +150 Unit Vdc Vdc Vdc mJ mA C C C REV 1 (c) Motorola, Small-Signal Transistors, FETs and Diodes Device Data Motorola Inc. 1997 1 MDC3105LT1 THERMAL CHARACTERISTICS Characteristic Total Device Power Dissipation(1) Derate above 25C Thermal Resistance Junction to Ambient 1. FR-5 PCB of 1 x 0.75 x 0.062, TA = 25C Symbol PD RqJA Value 225 1.8 556 Unit mW mW/C C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Output Zener Breakdown Voltage (@ IT = 10 mA Pulse) Output Leakage Current @ 0 Input Voltage (VO = 5.5 Vdc, Vin = O.C., TA = 25C) (VO = 5.5 Vdc, Vin = O.C., TA = 85C) Guaranteed "OFF" State Input Voltage (IO 100 mA) V(BRout) V(-BRout) IOO -- -- Vin(off) -- -- -- -- 5.0 30 0.4 V 6.2 -- 6.6 - 0.7 7.0 -- V V A ON CHARACTERISTICS Input Bias Current (HFE Limited) (IO = 250 mA, VO = 0.25 Vdc, TA = -40C) Output Saturation Voltage (IO = 250 mA, Iin = 1.5 mA, TA = -40C) Output Sink Current Continuous (TA = -40C, VCE = 0.25 Vdc, Iin = 1.5 mA) Iin -- VO(sat) -- IO(on) 200 250 -- 0.25 0.4 mA 1.5 2.5 Vdc mAdc TYPICAL APPLICATION-DEPENDENT SWITCHING PERFORMANCE SWITCHING CHARACTERISTICS Characteristic Propagation Delay Times: High to Low Propagation Delay; Figure 1 (5.0 V 74HC04) Low to High Propagation Delay; Figure 1 (5.0 V 74HC04) High to Low Propagation Delay; Figures 1, 13 (3.0 V 74HC04) Low to High Propagation Delay; Figures 1, 13 (3.0 V 74HC04) High to Low Propagation Delay; Figures 1, 14 (5.0 V 74LS04) Low to High Propagation Delay; Figures 1, 14 (5.0 V 74LS04) Transition Times: Fall Time; Figure 1 (5.0 V 74HC04) Rise Time; Figure 1 (5.0 V 74HC04) Fall Time; Figures 1, 13 (3.0 V 74HC04) Rise Time; Figures 1, 13 (3.0 V 74HC04) Fall Time; Figures 1, 14 (5.0 V 74LS04) Rise Time; Figures 1, 14 (5.0 V 74LS04) Symbol tPHL tPLH tPHL tPLH tPHL tPLH tf tr tf tr tf tr Min -- -- -- -- -- -- -- -- -- -- -- -- Typ 55 430 85 315 55 2.4 45 160 70 195 45 2.4 Max -- -- -- -- -- -- -- -- -- -- -- -- Units nS mS nS mS VCC Vin 50% GND tPLH 90% 50% 10% tr tf tPHL VZ VCC GND Vout Figure 1. Switching Waveforms 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC3105LT1 TYPICAL PERFORMANCE CHARACTERISTICS (ON CHARACTERISTICS) 500 HFE, TRANSISTOR DC CURRENT GAIN 450 400 INPUT VOLTAGE (VOLTS) 350 300 250 200 150 100 50 0 1.0 10 100 1000 IO, OUTPUT SINK CURRENT (mA) VO = 1.0 V VO = 0.25 V -40C 25C TJ = 85C 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 MC54LS04 +BAL99LT1 1.0 1.5 2.0 2.5 3.0 MC68HC05C8 @ 3.3 Vdc MC14049B @ 4.5 Vdc TJ = 25C VO = 0.25 V 3.5 4.0 MC74HC04 @ 4.5 Vdc MC68HC05C8 @ 5.0 Vdc MDC3105LT1 Vin vs. Iin MC74HC04 @ 3.0 Vdc INPUT CURRENT (mA) Figure 2. Transistor DC Current Gain Figure 3. Input V-I Requirement Compared to Possible Source Logic Outputs 500 Iin = 1.5 mA 1.2 mA 1.0 mA 0.8 mA 0.6 mA 200 0.4 mA 0.2 mA 0.1 mA 0 50 45 OUTPUT CURRENT (mA) TJ = 85C Iout , OUTPUT CURRENT (mA) 40 35 30 25 20 15 10 5.0 0 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 INPUT CURRENT (mA) - 40C 25C 400 300 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VO, OUTPUT VOLTAGE (Vdc) Figure 4. Threshold Effects Figure 5. Transistor Output V-I Characteristic 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.04 8.5 TJ = 25C VZ , ZENER CLAMP VOLTAGE (VOLTS) TJ = -40C 8.0 Vout , OUTPUT VOLTAGE (Vdc) 7.5 7.0 TJ = 85C 25C Iout = 500 mA 10 mA 0.1 50 mA 125 mA 1.0 Iin, INPUT CURRENT (mA) 175 mA 350 mA 10 6.5 6.0 1.0 10 - 40C 100 1000 IZ, ZENER CURRENT (mA) Figure 6. Output Saturation Voltage versus Iout/Iin Figure 7. Zener Clamp Voltage versus Zener Current Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MDC3105LT1 TYPICAL PERFORMANCE CHARACTERISTICS (OFF CHARACTERISTICS) 10,000 k VCC = 5.5 Vdc 1000 k OUTPUT LEAKAGE CURRENT (nA) 100 k 10 k 1.0 k 100 10 1.0 -55 Vin = 0 Vdc Vin = 0.35 Vdc OUTPUT LEAKAGE CURRENT (nA) Vin = 0.5 Vdc 10 k 100 k TJ = 25C Vin = 0.5 Vdc 1.0 k 100 Vin = 0.35 Vdc 10 Vin = 0 Vdc 1.0 0 -35 -15 5.0 25 45 TJ, JUNCTION TEMPERATURE (C) 65 85 0 1.0 4.0 5.0 2.0 3.0 VCC, SUPPLY VOLTAGE (Vdc) 6.0 7.0 Figure 8. Output Leakage Current versus Temperature 1.0 Figure 9. Output Leakage Current versus Supply Voltage RCE(sat) Iout(max) = 500 mA PW = 7.0 ms DC = 5% *34 ms *24 ms PW = 10 ms DC = 20% Iout (AMPS) TA = 25C = TRANSISTOR PC THERMAL LIMIT * = MAX L/R FROM ZENER PULSED ENERGY LIMIT (REFER TO FIGURE 11) 0.1 PW = 0.1 s DC = 50% CONTINUOUS DUTY *90 ms *232 ms *375 ms VCC(max) = +6.0 Vdc 0.01 0.1 1.0 Vout (VOLTS) TYPICAL IZ vs VZ 10 Figure 10. Safe Operating Area 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC3105LT1 100 k TA = 25C Emax = 50 mJ L/R = 2 * Emax / (Vzpk * Izpk) 10 k MAX L/R TIME CONSTANT (ms) 1.0 k 100 10 0.001 0.01 Izpk (AMPS) 0.1 1.0 Figure 11. Zener Repetitive Pulse Energy Limit on L/R Time Constant 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Pd(pk) 0.01 SINGLE PULSE 0.001 0.01 0.1 1.0 10 100 t1, PULSE WIDTH (ms) 1000 PW t2 PERIOD DUTY CYCLE = t1/t2 t1 10,000 100,000 1,000,000 Figure 12. Transient Thermal Response Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 MDC3105LT1 Using TTR Designing for Pulsed Operation For a repetitive pulse operating condition, time averaging allows one to increase a device's peak power dissipation rating above the average rating by dividing by the duty cycle of the repetitive pulse train. Thus, a continuous rating of 200 mW of dissipation is increased to 1.0 W peak for a 20% duty cycle pulse train. However, this only holds true for pulse widths which are short compared to the thermal time constant of the semiconductor device to which they are applied. For pulse widths which are significant compared to the thermal time constant of the device, the peak operating condition begins to look more like a continuous duty operating condition over the time duration of the pulse. In these cases, the peak power dissipation rating cannot be merely time averaged by dividing the continuous power rating by the duty cycle of the pulse train. Instead, the average power rating can only be scaled up a reduced amount in accordance with the device's transient thermal response, so that the device's max junction temperature is not exceeded. Figure 12 of the MDC3105LT1 data sheet plots its transient thermal resistance, r(t) as a function of pulse width in ms for various pulse train duty cycles as well as for a single pulse and illustrates this effect. For short pulse widths near the left side of the chart, r(t), the factor, by which the continuous duty thermal resistance is multiplied to determine how much the peak power rating can be increased above the average power rating, approaches the duty cycle of the pulse train, which is the expected value. However, as the pulse width is increased, that factor eventually approaches 1.0 for all duty cycles indicating that the pulse width is sufficiently long to appear as a continuous duty condition to this device. For the MDC3105LT1, this pulse width is about 100 seconds. At this and larger pulse widths, the peak power dissipation capability is the same as the continuous duty power capability. To use Figure 12 to determine the peak power rating for a specific application, enter the chart with the worst case pulse condition, that is the max pulse width and max duty cycle and determine the worst case r(t) for your application. Then calculate the peak power dissipation allowed by using the equation, Pd(pk) = (TJmax - TAmax) / (RqJA * r(t)) Pd(pk) = (150C - TAmax) / (556C/W * r(t)) Thus for a 20% duty cycle and a PW = 40 ms, Figure 12 yields r(t) = 0.3 and when entered in the above equation, the max allowable Pd(pk) = 390 mW for a max TA = 85C. Also note that these calculations assume a rectangular pulse shape for which the rise and fall times are insignificant compared to the pulse width. If this is not the case in a specific application, then the VO and IO waveforms should be multiplied together and the resulting power waveform integrated to find the total dissipation across the device. This then would be the number that has to be less than or equal to the Pd(pk) calculated above. A circuit simulator having a waveform calculator may prove very useful for this purpose. Notes on SOA and Time Constant Limitations Figure 10 is the Safe Operating Area (SOA) for the MDC3105LT1. Device instantaneous operation should never be pushed beyond these limits. It shows the SOA for the Transistor "ON" condition as well as the SOA for the zener during the turn-off transient. The max current is limited by the Izpk capability of the zener as well as the transistor in addition to the max input current through the resistor. It should not be exceeded at any temperature. The BJT power dissipation limits are shown for various pulse widths and duty cycles at an ambient temperature of 25C. The voltage limit is the max VCC that can be applied to the device. When the input to the device is switched off, the BJT "ON" current is instantaneously dumped into the zener diode where it begins its exponential decay. The zener clamp voltage is a function of that BJT current level as can be seen by the bowing of the VZ versus IZ curve at the higher currents. In addition to the zener's current limit impacting this device's 500 mA max rating, the clamping diode also has a peak energy limit as well. This energy limit was measured using a rectangular pulse and then translated to an exponential equivalent using the 2:1 relationship between the L/R time constant of an exponential pulse and the pulse width of a rectangular pulse having equal energy content. These L/R time constant limits in ms appear along the VZ versus IZ curve for the various values of IZ at which the Pd lines intersect the VCC limit. The L/R time constant for a given load should not exceed these limits at their respective currents. Precise L/R limits on zener energy at intermediate current levels can be obtained from Figure 11. Designing with this Data Sheet 1. Determine the maximum inductive load current (at max VCC, min coil resistance & usually minimum temperature) that the MDC3105 will have to drive and make sure it is less than the max rated current. 2. For pulsed operation, use the Transient Thermal Response of Figure 12 and the instructions with it to determine the maximum limit on transistor power dissipation for the desired duty cycle and temperature range. 3. Use Figures 10 & 11 with the SOA notes above to insure that instantaneous operation does not push the device beyond the limits of the SOA plot. 4. While keeping any VO(sat) requirements in mind, determine the max input current needed to achieve that output current from Figures 2 & 6. 5. For levels of input current below 100 mA, use the input threshold curves of Figure 4 to verify that there will be adequate input current available to turn on the MDC3105 at all temperatures. 6. For levels of input current above 100 mA, enter Figure 3 using that max input current and determine the input voltage required to drive the MDC3105 from the solid Vin versus Iin line. Select a suitable drive source family from those whose dotted lines cross the solid input characteristic line to the right of the Iin, Vin point. 7. Using the max output current calculated in step 1, check Figure 7 to insure that the range of zener clamp voltage over temperature will satisfy all system & EMI requirements. 8. Using Figures 8 & 9, insure that "OFF" state leakage over temperature and voltage extremes does not violate any system requirements. 9. Review circuit operation and insure none of the device max ratings are being exceeded. 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC3105LT1 APPLICATIONS DIAGRAMS +3.0 VDD +3.75 Vdc +4.5 VCC +5.5 Vdc ++ AROMAT TX2-L2-5 V Vout (3) MDC3105LT1 Vin (1) Vout (3) MDC3105LT1 Vin (1) 74HC04 OR EQUIVALENT 74HC04 OR EQUIVALENT GND (2) GND (2) Figure 13. A 200 mW, 5.0 V Dual Coil Latching Relay Application with 3.0 V-HCMOS Level Translating Interface Max Continuous Current Calculation for TX2-5V Relay, R1 = 178 Nominal @ RA = 25C Assuming 10% Make Tolerance, R1 = 178 * 0.9 = 160 Min @ TA = 25C TC for Annealed Copper Wire is 0.4%/C R1 = 160 * [1+(0.004) * (-40-25)] = 118 Min @ -40C IO Max = (5.5 V Max - 0.25V) /118 W = 45 mA +4.5 TO +5.5 Vdc + AROMAT TX2-5V - Vout (3) MDC3105LT1 74LS04 BAL99LT1 74HC04 OR EQUIVALENT - AROMAT JS1E-5V + +4.5 TO +5.5 Vdc + AROMAT JS1E-5V - + AROMAT JS1E-5V - - AROMAT JS1E-5V + Vout (3) MDC3105LT1 Vin (1) GND (2) Figure 14. A 140 mW, 5.0 V Relay with TTL Interface Figure 15. A Quad 5.0 V, 360 mW Coil Relay Bank Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 MDC3105LT1 TYPICAL OPERATING WAVEFORMS 4.5 225 3.5 V in (VOLTS) IC (mA) 10 30 50 TIME (ms) 70 90 175 2.5 125 1.5 75 500 M 25 10 30 50 TIME (ms) 70 90 Figure 16. 20 Hz Square Wave Input Figure 17. 20 Hz Square Wave Response 9 172 7 Vout (VOLTS) IZ (mA) 10 30 50 TIME (ms) 70 90 132 5 92 3 52 1 12 10 30 50 TIME (ms) 70 90 Figure 18. 20 Hz Square Wave Response Figure 19. 20 Hz Square Wave Response 8 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC3105LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. Thermal Clad is a trademark of the Bergquist Company. * The soldering temperature and time should not exceed * When shifting from preheating to soldering, the * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. maximum temperature gradient should be 5C or less. 260C for more than 10 seconds. Motorola Small-Signal Transistors, FETs and Diodes Device Data 9 MDC3105LT1 PACKAGE DIMENSIONS A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. BS 1 2 V G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 318-08 ISSUE AE Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 10 MDC3105LT1/D Motorola Small-Signal Transistors, FETs and Diodes Device Data |
Price & Availability of MDC3105LT1D
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |